BFP740_09 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
G_ms = 27 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz f_T-Silicon Germanium technology
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BFP740
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740
Marking
Pin Configuration
R7s
1=B 2=E 3=C 4=E -
-
1_{Pb-containing package may be available upon special request}
Package
SOT343
2009-12-04
1