BFP740_09 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Third order Intercept Point IP₃ = ƒ (I_C)
(Output, Z_S = Z_L = 50 Ω )
V_CE = parameter, f = 1.8 GHz
30
27
4.00V
3.00V
24
2.00V
21
18
1.00V
15
12
9
6
3
0
0
5
10
15
20
25
30
35
I [mA]
C
Power gain G_ma, G_ms = ƒ (f)
V_CE = 3 V, I_C = 25 mA
55
50
45
40
35
30
G
ms
25
20
|S |²
21
15
G
ma
10
5
0
1
2
3
4
5
6
f [GHz]
BFP740
Transition frequency f_T = ƒ(I_C)
f = 2 GHz
V_CE = parameter
50
45
2V to 4V
40
35
30
25
1.00V
20
15
0.75V
10
5
0
0
5
10
15
20
25
I [mA]
C
Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 3 V
f = parameter
0.50V
30
35
34
32
0.90GHz
30
28
1.80GHz
26
2.40GHz
24
3.00GHz
22
4.00GHz
20
5.00GHz
18
6.00GHz
16
14
12
10
0
5
10
15
20
25
30
35
I [mA]
C
2009-12-04
6