BFP193W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP193W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
dB I_C=30mA
0.9GHz
18
16
0.9GHz
14
1.8GHz
12
10
1.8GHz
8
6
4
2
0
0
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
34
8V
dBm
30
5V
28
26
3V
24
22
2V
20
18
16
1V
14
12
0 10 20 30 40 50 60 mA 80
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
35
I_C=30mA
dB
V_CE = Parameter
35
dB
I_C=30mA
25
25
20
20
15
15
10
10
10V
5
10V
1V
2V
5
0.7V
0
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
-5
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Aug-09-2001