BFP193W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP193W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1.6
pF
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16
V
24
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
8
7
8V
5V
6
3V
5
2V
4
3
1V
0.7V
2
1
0
0 10 20 30 40 50 60 70 80 mA 95
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
dB
10V
18
5V
3V
16
2V
14
12
1V
10
8
0.7V
6
0 10 20 30 40 50 60 70 80 mA 95
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
15
dB
10V
12
11
3V
10
2V
9
8
7
6
1V
5
4
3
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 85
I_C
6
Aug-09-2001