BFP193W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP193W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 50 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
C_ce
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Noise figure
F
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
f = 1.8 GHz
6
8
- GHz
- 0.63 0.9 pF
- 0.33 -
-
1.8
-
dB
-
1.3
-
-
2.1
-
Power gain, maximum available ¹⁾
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
G_ma
f = 1.8 GHz
- 19.5 -
-
13
-
Transducer gain
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
-
15
-
-
9
-
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Aug-09-2001