BFP193W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP193W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.2738 fA
VAF = 24
V
NE =
1.935
-
VAR = 3.8742 V
NC = 0.94371 -
RBM = 1

CJE = 1.1824 fF
TF =
18.828 ps
ITF = 0.96893 mA
VJC = 1.1828 V
TR =
1.0037 ns
MJS = 0
-
XTI = 3
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
125
-
0.26949 A
14.267 -
0.037925 A
1.8368 
0.76534
0.70276 V
0.69477 -
0
deg
0.30002 -
0
fF
0
-
0.72063 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
NF = 0.95341 -
ISE = 10.627 fA
NR = 1.4289 -
ISC = 0.037409 fA
IRB =
RC =
0.91763 mA
0.11938

MJE = 0.48654 -
VTF = 0.8
V
CJC = 935.03 fF
XCJC = 0.053563 -
VJS = 0.75
V
EG = 1.11
eV
TNOM 300
K
Package Equivalent Circuit:
L_BI =
0.43
nH
L_BO = 0.47
nH
L_EI =
0.26
nH
L_EO = 0.12
nH
L_CI =
0.06
nH
L_CO = 0.36
nH
C_BE = 68
fF
C_CB = 46
fF
C_CE = 232
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001