SPP15P10P Datasheet, PDF (6/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary data
SPP15P10P
9 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = -10.6 A, V_GS = -10 V
SPP15P10P
0.75
Ω
0.6
0.55
0.5
0.45
0.4
0.35
0.3
98%
0.25
0.2
typ
0.15
0.1
0.05
0
-60 -20 20 60 100 140 °C 200
T_j
11 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0, f=1 MHz, T_j = 25 °C
10 ⁴
10 Typ. gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS
5.2
4.4
98%
4
3.6
3.2
typ.
2.8
2.4
2%
2
1.6
1.2
0.8
0.4
0
-60 -20 20
60 100
180
12 Forward character. of reverse diode
I_F = f (V_SD)
parameter: T_j
-10 ^{2 SPP15P10P}
pF
A
C_iss
10 ³
-10 ¹
C_oss
C_rss
10 ²
10 ¹
0 4 8 12 16 20 24 28 _V 36
-V_DS
-10 ⁰
-10 ^-1
0
T_j = 25 °C typ
T_j = 175 °C typ
T_j = 25 °C (98%)
T_j = 175 °C (98%)
-0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3
V_SD
Page 6
2002-07-26