SPP15P10P Datasheet, PDF (2/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary data
SPP15P10P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ¹⁾
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
-
- 1.17 K/W
-
-
75
-
-
45
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V_(BR)DSS -100
-
-V
V_GS=0, I_D=-250µA
Gate threshold voltage, V_GS = V_DS
I_D =-1.54mA
Zero gate voltage drain current
V_DS=-100V, V_GS=0, T_j=25°C
V_DS=-100V, V_GS=0, T_j=150°C
V_GS(th)
I_DSS
-4
-3 -2.1
µA
- -0.1 -1
-
-10 -100
Gate-source leakage current
V_GS=-20V, V_DS=0
Drain-source on-state resistance
V_GS=-10V, I_D=-10.6A
I_GSS
R_DS(on)
-
-10 -100 nA
- 0.18 0.24 Ω
1Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Page 2
2002-07-26