SPP15P10P Datasheet, PDF (5/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary data
SPP15P10P
5 Typ. output characteristic
I_D = f (V_DS)
parameter: T_j =25°C, -V_GS
40
19.9V
A _10V
8V
7V
32 _6V
5.5V
28 _5V
4.5V
24 4V
20
6 Typ. drain-source on resistance
R_DS(on) = f (I_D)
parameter: V_GS; T_j =25°C, -V_GS
1
Ω
4V
4.5V
5V
0.8
5.5V
6V
0.7
7V
8V
0.6
10V
19.9V
0.5
16
0.4
12
0.3
8
0.2
4
0.1
0
0 1 2 3 4 5 6V 8
-V_DS
0
0 5 10 15 20 25 30 A 40
-I_D
7 Typ. transfer characteristics
I_D= f ( V_GS ); |V_DS|≥ 2 x |I_D| x R_DS(on)max
parameter: T_j = 25 °C
30
A
8 Typ. forward transconductance
g_fs = f(I_D)
parameter: T_j =25°C
14
S
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5_V
7
-V_GS
Page 5
10
8
6
4
2
0
0
4
8 12 16 20 24 _A 30
-I_D
2002-07-26