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| SPP15P10P Datasheet, PDF (3/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor | |||
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Preliminary data
SPP15P10P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
|VDS|⥠2*|ID|*RDS(on)max 4.7
9.3
-S
ID =-10.7A
Input capacitance
Ciss
VGS=0, VDS=-25V,
- 944 1180 pF
Output capacitance
Coss
f=1MHz
- 226 283
Reverse transfer capacitance Crss
-
91 114
Turn-on delay time
td(on)
VDD=-50V, VGS=-10V,
-
8.9 13.4 ns
Rise time
tr
ID=-15A, RG=6â¦
-
30 45
Turn-off delay time
td(off)
-
35 53
Fall time
tf
-
22 33
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=-80V, ID=-15A
VDD=-80V, ID=-15A,
VGS=0 to -10V
Gate plateau voltage
V(plateau) VDD=-80V, ID=-15A
Reverse Diode
Inverse diode continuous
IS
forward current
TA=25°C
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
VGS=0, |IF| = |IS|
VR=-50V, |IF| = |IS|,
diF/dt=100A/µs
- -4.5 -6.7 nC
- -15.3 -23
- -33.4 -50
- -5.7 - V
-
-
-15 A
-
-
-60
- -0.94 -1.35 V
- 100 150 ns
- 419 628 nC
Page 3
2002-07-26
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