SGP02N60_07 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

SGP02N60
SGD02N60
100ns
t_d(off)
t_f
100ns
t_d(off)
t_f
t_d(on)
t_r
10ns
0A
1A
2A
3A
4A
5A
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, R_G = 1 1 8 Ω,
Dynamic test circuit in Figure E)
t_d(on)
t_r
10ns
0Ω
100Ω
200Ω
300Ω
400Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, I_C = 2A,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_f
t_d(on)
t_r
10ns
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 400V, V_GE = 0/+15V,
I_C = 2A, R_G = 1 1 8Ω,
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
3.5V
max.
3.0V
typ.
2.5V
min.
2.0V
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I_C = 0.15mA)
6
Rev. 2.3 Sep 07