SGP02N60_07 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

7A
6A
5A
V_GE=20V
15V
4A
13V
11V
3A
9V
7V
2A
5V
1A
0A
0V
1V
2V
3V
4V
5V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T_j = 25°C)
SGP02N60
SGD02N60
7A
6A
5A
V_GE=20V
4A
15V
13V
3A
11V
9V
2A
7V
5V
1A
0A
0V
1V
2V
3V
4V
5V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T_j = 150°C)
8A
7A
T_j=+25°C
-55°C
6A
+150°C
5A
4A
3A
2A
1A
0A
0V
2V
4V
6V
8V
10V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V_CE = 10V)
4.0V
3.5V
3.0V
I_C = 4A
2.5V
2.0V
I_C = 2A
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V_GE = 15V)
5
Rev. 2.3 Sep 07