SGP02N60_07 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

SGP02N60
SGD02N60
16A
I_c
14A
12A
10A
8A
T_C=80°C
6A
T_C=110°C
4A
2A
I_c
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T_j ≤ 150°C, D = 0.5, V_CE = 400V,
V_GE = 0/+15V, R_G = 118Ω)
10A
1A
0.1A
t_p=2µ s
15µs
50µs
200µs
1ms
DC
0.01A
1V
10V
100V
1000V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T_C = 25°C, T_j ≤ 150°C)
35W
30W
25W
20W
15W
10W
5W
0W
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(T_j ≤ 150°C)
7A
6A
5A
4A
3A
2A
1A
0A
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V_GE ≤ 15V, T_j ≤ 150°C)
4
Rev. 2.3 Sep 07