SGP02N60_07 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

SGP02N60
SGD02N60
Fast IGBT in NPT-technology
• 75% lower E_off compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC² for target applications
PG-TO-252-3-1 (D-PAK)
(TO-252AA)
PG-TO-220-3-1
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
Type
SGP02N60
SGD02N60
V_CE
600V
600V
I_C
V_{CE(sat)150°C}
T_j
2A
2.2V
150°C
2A
2.2V
150°C
Marking
Package
G10N60 PG-TO-220-3-1
G10N60 PG-TO-252-3-11
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
I_C = 2 A, V_CC = 50 V, R_GE = 25 Ω ,
start at T_j = 25°C
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
E_AS
t_SC
P_tot
T_j , T_stg
T_s
Value
Unit
600
V
A
6.0
2.9
12
12
±20
V
13
mJ
10
µs
30
W
-55...+150
°C
260
2 _{J-STD-020 and JESD-022}
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
1
Rev. 2.3 Sep 07