SGP02N120_07 Datasheet, PDF (6/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP02N120
SGD02N120, SGI02N120
t_d(off)
100ns
t_f
100ns
t_d(off)
t_f
t
d(on)
t_r
10ns
0A
2A
4A
6A
8A
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, R_G = 9 1 Ω,
dynamic test circuit in Fig.E)
t_d(off)
100ns
t_f
t_d(on)
10ns
-50°C
t_r
0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 800V,
V_GE = +15V/0V, I_C = 2A, R_G = 9 1Ω,
dynamic test circuit in Fig.E)
t_d(on)
10ns
0Ω
t_r
50Ω
100Ω
150Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, I_C = 2A,
dynamic test circuit in Fig.E)
6V
5V
4V
max.
3V
typ.
2V
min.
1V
0V
-50°C
0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I_C = 0.3mA)
Power Semiconductors
6
Rev. 2.3 Sep. 07