SGP02N120_07 Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP02N120
SGD02N120, SGI02N120
12A
I_c
10A
8A
T_C=80°C
6A
T_C=110°C
4A
2A
I_c
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T_j ≤ 150°C, D = 0.5, V_CE = 800V,
V_GE = +15V/0V, R_G = 91Ω)
10A
t_p=10µs
1A
0.1A
50µs
150µs
500µs
20ms
DC
0.01A
1V
10V
100V
1000V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T_C = 25°C, T_j ≤ 150°C)
60W
50W
40W
30W
20W
10W
0W
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T_j ≤ 150°C)
7A
6A
5A
4A
3A
2A
1A
0A
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V_GE ≤ 15V, T_j ≤ 150°C)
Power Semiconductors
4
Rev. 2.3 Sep. 07