SGP02N120_07 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP02N120
SGD02N120, SGI02N120
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=800V,I_C=2A,
V_GE=15V/0V,
R_G=91Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
23
16
260
61
0.16
0.06
0.22
Unit
max.
30 ns
21
340
80
0.21 mJ
0.08
0.29
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=800V,
I_C=2A,
V_GE=15V/0V,
R_G=91Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
26
14
290
85
0.27
0.11
0.38
Unit
max.
31 ns
17
350
102
0.33 mJ
0.15
0.48
1) _{Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.}
Power Semiconductors
3
Rev. 2.3 Sep. 07