SGP02N120_07 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP02N120
SGD02N120, SGI02N120
Fast IGBT in NPT-technology
• 40% lower E_off compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
• Qualified according to JEDEC¹ for target applications
PG-TO-252-3-11
(D-PAK)
PG-TO-220-3-1
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-262-3-1
(I²-PAK)
Type
SGP02N120
SGD02N120
SGI02N120
V_CE
I_C
E_off
T_j
Marking
Package
1200V 2A 0.11mJ 150°C GP02N120 PG-TO-220-3-1
1200V 2A 0.11mJ 150°C 02N120 PG-TO-252-3-11
1200V 2A 0.11mJ 150°C GI02N120 PG-TO-262-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
I_C = 2A, V_CC = 50V, R_GE = 25Ω, start at T_j = 25°C
Short circuit withstand time²
V_GE = 15V, 100V ≤ V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature,
PG-TO252 (reflow soldering, MSL3)
Other packages: 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
E_AS
t_SC
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
6.2
2.8
9.6
9.6
±20
V
10
mJ
10
µs
62
W
-55...+150
°C
260
260
1 _{J-STD-020 and JESD-022}
2 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.3 Sep. 07