SDB06S60_05 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

9 Typ. capacitive charge vs. current slope
Q_c=f(di_F/dt)
parameter: T_j = 150 °C
22
nC
I_F*2
I_F
18
16
I_F*0.5
14
12
10
8
6
4
2
0
100 200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
SDB06S60
Rev. 2.0
Page 6
2005-02-17