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SDB06S60_05 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode
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SDB06S60
5 Typ. reverse current vs. reverse voltage
IR=f(VR)
10 2
µA
6 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SDP06S60
K/W
10 1
150°C
125°C
100°C
25°C
10 0
10 0
10 -1
10 -1
10 -2
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
100 150 200 250 300 350 400 450 500 V 600
VR
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
250
pF
150
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
8 Typ. C stored energy
EC=f(VR)
3.5
µJ
2.5
2
1.5
100
1
50
0.5
0
10
0
10 1
10 2
V
10 3
VR
0
0
100 200 300 400 V
600
VR
Rev. 2.0
Page 5
2005-02-17
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