SDB06S60_05 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

SDB06S60
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm² cooling area ²⁾
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm² cooling area ²⁾
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
R_thJA
-
-
2.6 K/W
-
-
62
-
-
62
-
35
-
-
-
75
-
-
50
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Diode forward voltage
I_F=6A, T_j=25°C
I_F=6A, T_j=150°C
Reverse current
V_R=600V, T_j=25°C
V_R=600V, T_j=150°C
V_F
V
-
1.5 1.7
-
1.7 2.1
I_R
µA
-
20 200
-
50 1000
1CCM, _{VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%}
2Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Rev. 2.0
Page 2
2005-02-17