SDB06S60_05 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

SDB06S60
1 Power dissipation
P_tot = f (T_C)
60
W
2 Diode forward current
I_F= f (T_C)
parameter: T_j≤175 °C
6.5
A
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 _°C 180
T_C
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 20 40 60 80 100 120 140 _°C 180
T_C
3 Typ. forward characteristic
I_F = f (V_F)
parameter: T_j , tp = 350 µs
12
A
150°C
125°C
10 _100°C
9 ^25°C
-40°C
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
Rev. 2.0
4 Typ. forward power dissipation vs.
average forward current
P_F(AV)=f(I_F) T_C=100°C, d = t_p/T
V
2.5
V_F
28
W
d=0.1
24 _d=0.2
22 ^d=0.5
d=1
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
A
12
I_F(AV)
Page 4
2005-02-17