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PTFA211801E_15 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET | |||
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PTFA211801E
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R2
1.3Kï
R1
1.2K ï
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF C3
0.001µF
n R3
2K ï
R4
2K ï
ig R5
s 10ï
e C4
d 10µF
35V
R6
5.1K ï
R8
5.1K ï
0C.51µF 5R.71Kï C0.61µF .C017µF
9C.81pF ï¬7
C12
9.1pF
C13
C14
0.02µF 1µF
C15
22µF
50V
for new RF_IN
R9
10 ï
ï¬8
C10
8.2pF
ï¬1
ï¬2
ï¬3
ï¬4
ï¬5
DUT
ï¬6
ï¬10 ï¬11 ï¬12
C21
8.2pF
ï¬13
ï¬14
C9
0.5pF
C11
1.5pF
C20
ï¬9
0.3pF
RF_OUT
mended Reference circuit schematic for Æ = 2140 MHz
C16
9.1pF
C17
C18
0.02µF 1µF
C19
22µF
50V
A211801ef _sch
VDD
not recom Electrical Characteristics at 2140 MHz
Transmission Electrical
Line Characteristics
l1
0.097 l, 50.0 W
l2
0.267 l, 50.0 W
l3
0.136 l, 42.0 W
l4
0.087 l, 42.0 W
Dimensions: L x W (mm)
7.37 x 1.40
19.86 x 1.40
10.24 x 1.85
6.50 x 1.85
Dimensions: L x W (in.)
0.290 x 0.055
0.782 x 0.055
0.403 x 0.073
0.256 x 0.073
l5
0.018 l, 11.4 W
1.24 x 10.24
0.049 x 0.403
l6
0.077 l, 6.9 W
5.23 x 17.78
0.206 x 0.700
l7
0.207 l, 48.0 W
15.70 x 1.50
0.618 x 0.059
l8, l9
0.256 l, 45.0 W
19.30 x 1.65
0.760 x 0.065
l10
0.087 l, 5.0 W
5.84 x 25.40
0.230 x 1.000
l11 (taper)
0.073 l, 5.0 W / 40.0 W
5.59 x 25.40 / 1.98
0.220 x 1.000 / 0.078
l12
0.019 l, 40.0 W
1.45 x 1.98
0.057 x 0.078
l13
0.087 l, 50.0 W
6.65 x 1.40
0.262 x 0.055
l14
0.403 l, 50.0 W
30.73 x 1.40
1.210 x 0.055
Data Sheet
6 of 9
Rev. 07, 2015-03-03
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