PTFA211801E_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFA211801E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
180 W, 2110 – 2170 MHz
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally _PTFA211801E
matched LDMOS FET intended for WCDMA applications. It is _{Package H-36260-2}
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Features
design
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 2140 MHz,
w _{3GPP WCDMA signal, PAR = 8 dB,}
e _{10 MHz carrier spacing}
n _-25
30
for ^-30
Efficiency
25
-35
20
d _IM3
e _-40
15
d _-45
10
en _-50
ACPR
5
m _-55
om ³⁴
36 38 40 42 44 46
Average Output Power (dBm)
0
48
t ^rec _{RF Characteristics}
no _{WCDMA Measurements (tested in Infineon test fixture)}
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P_1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
• Pb-free and RoHS-compliant
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 35 W average, ƒ₁ = 2135 MHz, ƒ₂ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
14.5 15.5
hD
26
27.5
IMD
—
–36
Max
—
—
–34
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 07, 2015-03-03