PTFA211801E_15 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Confidential, Limited Internal Distribution
Typical Performance (cont.)
PTFA211801E
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 2170 MHz
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1.2 A, ƒ = 2170 MHz
17
T_CASE = 25° C
T_CASE = 90° C
16
Gain
15
60
Efficiency
47
34
18
17
Gain
16
15
design^Efficiency
60
50
40
30
14
13
0
20
40
w ₂₁
ne ₈
r _{60 80 100 120 140 160 180}
ended ^{fo Output Power (W)}
14
20
13
10
12
0
0
20 40 60 80 100 120 140 160 180
Output Power (W)
-20
-25
-30
-35
-40
Intermodulation Distortion Products
vs. Tone Spacing
m _{VDD = 28 V IDQ = 1.2 A, ƒ = 2140 MHz,}
P_OUT = 51 dBm PEP
not ^{recom 3rd Order}
Two-tone Drive-up
V_DD = 28 V, I_DQ = 1.2 A,
ƒ = 2140 MHz, tone spacing = 1 MHz
-20
45
-25
Efficiency
40
-30
35
-35
IM3
IM5
30
-40
25
-45
20
5th
-50
15
-45
-50
7th
-55
10
IM7
-60
5
-55
0
5 10 15 20 25 30 35 40
-65
0
38
42
46
50
54
Tone Spacing (MHz)
Output Power, PEP (dBm)
Data Sheet
4 of 9
Rev. 07, 2015-03-03