PTFA211801E_15 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 150 W average, ƒ = 2170 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain Compression
G_comp
—
0.5
1.0
dB
design ^{Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)}
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
—
15.5
—
dB
Drain Efficiency
hD
—
38.5
—
%
Intermodulation Distortion
ew DC Characteristics
n _{Characteristic}
for ^{Drain-Source Breakdown Voltage}
Drain Leakage Current
ed _{Drain Leakage Current}
d _{On-State Resistance}
en Operating Gate Voltage
m Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.2 A
V_GS = 10 V, V_DS = 0 V
om ^{Maximum Ratings}
ec ^Parameter
r _{Drain-Source Voltage}
not ^{Gate-Source Voltage}
IMD
—
–28
—
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Symbol
V_DSS
V_GS
Value
65
–0.5 to +12
dBc
Unit
V
µA
µA
W
V
µA
Unit
V
V
Junction Temperature
T_J
200
°C
Storage Temperature Range
T_STG –40 to +150
°C
Thermal Resistance (T_CASE = 70°C, 150 W CW)
R_qJC
0.31
°C/W
Data Sheet
2 of 9
Rev. 07, 2015-03-03