PTFA082201E_09 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA082201E
PTFA082201F
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0. 001µF
C3
0.001µF
R3
2K V
R4
2K V
R5
10 V
C4
10µF
35V
R6
5.1K V
C5
0.1µF
R7
C6
5.1KV _1µF
C7
33pF
l6
L1
C11 C12
33pF 1µF
C13
10µF
50V
C14
100µF
50V
V DD
C15
C16
0.1µF 10µF
50V
RF_IN
C8
33pF
l1
l2
l3
l4
C9
3. 9pF
R8
l7
10 V
DUT
C23
3.3pF
C25
33pF
l5
l9
l10
l11 l12
l 13
C10
8.2pF
l8
C24
3.3pF
L2
C17 C18
33pF 1µF
C19
10µF
50V
C20
100µF
50V
C21
0.1µF
RF_OUT
a082201ef_bd_12-14-07
C22
10µF
50V
Reference circuit schematic for ƒ = 894 MHz
Circuit Assembly Information
DUT
PCB
PTFA082201E or PTFA082201F
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
Microstrip Electrical Characteristics at 894 MHz¹
l1
0.065 λ, 50.0 Ω
l2
0.049 λ, 38.0 Ω
l3
0.024 λ, 38.0 Ω
l4
0.083 λ, 7.8 Ω
l5
0.027 λ, 7.8 Ω
l6
0.190 λ, 78.0 Ω
l7, l8
0.183 λ, 60.0 Ω
l9
0.095 λ, 8.4 Ω
l10 (taper)
0.031 λ, 8.4 Ω / 11.2 Ω
l11 (taper)
0.077 λ, 11.2 Ω / 37.0 Ω
l12
0.025 λ, 37.0 Ω
l13
0.028 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W ( mm)
13.13 x 1.60
9.78 x 2.54
4.83 x 2.54
15.44 x 17.83
4.95 x 17.83
40.64 x 0.74
37.54 x 1.24
17.68 x 16.48
5.94 x 16.48 / 11.91
14.53 x 11.91 / 2.64
4.98 x 2.64
5.74 x 1.60
Dimensions: L x W (in.)
0.517 x 0.063
0.385 x 0.100
0.190 x 0.100
0.608 x 0.702
0.195 x 0.702
1.600 x 0.029
1.478 x 0.049
0.696 x 0.649
0.234 x 0.649 / 0.469
0.572 x 0.469 / 0.104
0.196 x 0.104
0.226 x 0.063
Data Sheet
6 of 10
Rev. 04.1, 2009-02-20