PTFA082201E_09 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFA082201E
PTFA082201F
2-Carrier WCDMA Performance
V_DD = 30 V, I_DQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
50
-30
T_CASE = 25°C
40 TCASE = 90°C
-35
30 ^Gain
IMD Efficiency
-40
20
-45
10
0
30
ACPR
35
40
45
Output Power (dBm)
-50
-55
50
Two-carrier WCDMA Power Sweep
V_DD = 30 V, I_DQ = 1600 mA, ƒ₁ = 889 MHz, ƒ₂ = 894
0
-10
-20
-30
-40
-50
-60
0
35
Efficiency
30
25
20
15
ACPR
10
5
10
20
30
40
50
Output Power (dBm)
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1950 mA, ƒ = 894 MHz
22
21
20
19 Gain
18
17
16
Efficiency
15
30
35
40
45
50
55
Output Power (dBm)
70
60
50
40
30
20
10
0
60
2-Tone Broadband Performance
V_DD = 30 V, I_DQ = 1950 mA, P_OUT = 110 W
50
45
40 Efficiency
35
Return Loss
30
25
20
Gain
15
850
865
880
895
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
910
Data Sheet
3 of 10
Rev. 04.1, 2009-02-20