PTFA082201E_09 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep
V_DD = 30 V, ƒ = 894 MHz,
series show I_DQ
20
2400 mA
19
1950 mA
18 ^{1600 mA}
17
30
35
40
45
50
55
Output Power (dBm)
Output Power vs. Drain Voltage
I_DQ = 1950 mA, ƒ = 960 MHz
54
53
52
24 26 28 30 32 34 36
Drain Voltage (V)
PTFA082201E
PTFA082201F
Intermodulation Distortion vs. Output Power
V_DD = 30 V, I_DQ = 1950 mA, ƒ₁ = 893, ƒ2 = 894 MHz
-20
-30
-40
3rd Order
-50
5th
-60
-70
7th
-80
30
35
40
45
50
55
Output Power, PEP (dBm)
IS-95 CDMA Performance
V_DD = 30 V, I_DQ = 1950 mA, ƒ = 894 MHz
40
-40
Adj 750 kHz
30
-50
20
-60
Efficiency
10
-70
Alt₁ 1.98 MHz
0
-80
25
30
35
40
45
50
Output Power, Avg. (dBm)
Data Sheet
4 of 10
Rev. 04.1, 2009-02-20