PTFA082201E_09 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
850
870
890
910
930
G
S
Z Source Ω
R
jX
1.792
–1.910
1.764
–1.624
1.737
–1.360
1.693
–1.147
1.703
–0.896
Z Load Ω
R
jX
1.999
–0.196
1.963
0.165
1.924
0.485
1.854
0.793
1.853
1.087
PTFA082201E
PTFA082201F
Z₀ = 50 Ω
Z Load
Z Source
0.1
930 MHz
850 MHz
930 MHz
850 MHz
Data Sheet
5 of 10
Rev. 04.1, 2009-02-20