BFS469L6 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – NPN Silicon RF TWIN Transistor

BFS469L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Noise figure
F
dB
TR1, I_C=5mA, V_CE = 3 V, f = 1.8 GHz, Z_S = Z_Sopt
TR1, I_C=5mA, V_CE = 3 V, f = 3 GHz, Z_S = Z_Sopt
TR2, I_C=3mA, V_CE = 6 V, f = 1 GHz, Z_S = Z_Sopt
TR2, I_C=3mA, V_CE = 8 V, f = 1.8 GHz, Z_S = Z_Sopt
-
1.1
-
-
1.4
-
-
1
-
-
1.3
-
Power gain, maximum stable¹⁾
TR1, I_C = 20 mA, V_CE = 3 V, Z_S=Z_Sopt, Z_L=Z_Lopt,
f = 1.8 GHz
G_ms
-
17
-
TR2, I_C = 10 mA, V_CE = 8 V, Z_S=Z_Sopt, Z_L=Z_Lopt,
f = 0.9 GHz
- 21.5 -
TR2, I_C = 10 mA, V_CE = 8 V, Z_S=Z_Sopt, Z_L=Z_Lopt,
f = 1.8 GHz
- 15.5 -
Power gain, maximum available¹⁾
TR1, I_C = 20mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 1,8 GHz
G_ma
-
Transducer gain
|S _21e|²
TR1, I_C=20mA, V_CE = 3 V, Z_S=Z_L=50Ω, f=1.8GHz
-
TR1, I_C=20mA, V_CE = 3 V, Z_S=Z_L=50Ω, f=3GHz
-
TR2, I_C=15mA, V_CE = 6 V, Z_S=Z_L=50Ω, f=1GHz
-
TR2, I_C=10mA, V_CE = 8 V, Z_S=Z_L=50Ω, f=1.8GHz
-
Third order intercept point at output ²⁾
IP₃
TR1, V_CE=3V, I_C=20mA, Z_S=Z_L=50Ω, f=1.8GHz
-
TR2, V_CE=8V, I_C=10mA, Z_S=Z_L=50Ω, f=1.8GHz
-
1dB Compression point at output
P _-1dB
TR1, I_C=20mA, V_CE=3V, Z_S=Z_L=50Ω, f=1.8GHz
-
TR1, I_C=10mA, V_CE=8V, Z_S=Z_L=50Ω, f=1.8GHz
-
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2_{), Gms = |S21e / S12e|}
2IP3 _{value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
12
14.5
10
16.5
11.5
28
24.5
12
6
-
-
-
-
-
dBm
-
-
-
-
6
2005-10-11