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BFS469L6 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – NPN Silicon RF TWIN Transistor
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BFS469L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
TR1, IC = 1 mA, IB = 0
TR2, IC = 1 mA, IB = 0
Collector-emitter cutoff current
TR1, VCE = 15 V , VBE = 0
TR1, VCE = 20 V, VBE = 0
Collector-base cutoff current
TR1, VCB = 5 V, IE = 0
TR2, VCB = 10 V, IE = 0
Emitter-base cutoff current
TR1, VEB = 0,5 V, IC = 0
TR2, VEB = 1 V, IC = 0
V(BR)CEO
4.5 5.8
V
-
10 16
-
ICES
µA
-
-
10
-
-
10
ICBO
nA
-
- 100
-
- 100
IEBO
µA
-
-
1
-
-
0.1
DC current gain-
hFE
TR1, IC = 20 mA, VCE = 3 V, pulse measured
TR2, IC = 5 mA, VCE = 6 V, pulse measured
-
90 120 160
100 140 180
4
2005-10-11
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