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BFS469L6 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – NPN Silicon RF TWIN Transistor
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BFS469L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz
TR2, IC = 15 mA, VCE = 6 V, f = 1 GHz
fT
16 22
-
7
9
-
Collector-base capacitance
TR1, VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
-
- 0.29 0.45
TR2, VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
0.25 0.45
Unit
GHz
pF
Collector emitter capacitance
TR1, VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
TR2, VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
-
-
- 0.14 -
0.14
Emitter-base capacitance
TR1, VEB = 0,5 V, f = 1 MHz, VCB = 0 ,
collector grounded
TR2, VEB = 0,5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
-
- 0.55 -
0.7
5
2005-10-11
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