BFP620_10 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 1.5V
f = parameter in GHz
30
dB
0.9
26
24
22
1.8
20
18
2.4
16
3
14
4
12
5
10
6
8
0 10 20 30 40 50 60 70 mA 90
I_C
Minimum noise figure NF_min = ƒ(I_C)
V_CE = 2 V, Z_S = Z_Sopt
BFP620
Power gain G_ma, G_ms = ƒ(V_CE)
I_C = 50 mA
f = parameter in GHz
30
0.9
dB
1.8
20
2.4
3
15
4
5
6
10
5
0
-5
0.2 0.6
1
1.4
1.8
V
2.6
V_CE
Minimum noise figure NF_min = ƒ(f)
V_CE = 2 V, Z_S = Z_Sopt
6
2010-09-21