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| BFP620_10 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor | |||
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BFP620
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
IC = 50 mA, VCE = 1.5 V, f = 1 GHz
Collector-base capacitance
Ccb
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
-
65
- GHz
- 0.12 0.2 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
- 0.22 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
- 0.46 -
Minimum noise figure
IC = 5 mA, VCE = 1.5 V, f=1.8GHz ZS = ZSopt
IC = 5 mA, VCE = 1.5 V, f= 6GHz ZS = ZSopt
Power gain, maximum stable1)
IC = 50 mA, VCE = 1.5 V, f = 1.8GHz ,
ZS = ZSopt, ZL = ZLopt
Power gain, maximum available
IC = 50 mA, VCE = 1.5 V, f = 6 GHz,
ZS = ZSopt, ZL = ZLopt
Transducer gain
IC = 50 mA, VCE =1.5 V, ZS=ZL=50 â¦
f = 1.8 GHz
NFmin
Gms
Gma
|S21e|2
dB
-
0.7
-
-
1.3
-
- 21.5 - dB
-
11
- dB
dB
-
20
-
f = 6 GHz
-
9.5
-
Third order intercept point at output2)
IP3
-
VCE = 2 V, IC = 50 mA, ZS=ZL=50 â¦, f=1.8GHz
1dB compression point at output
P-1dB
-
IC = 50 mA, VCE = 2 V, ZS =ZL=50 â¦, f=1.8 GHz
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50⦠from 0.1 MHz to 6 GHz
25.5
14.5
- dBm
-
3
2010-09-21
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