BFP620_10 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S = Z_L=50 Ω)
V_CE = parameter, f = 900MHz
27
dBm
2.3V
1.8V
21
18
15
1.3V
12
0.8V
9
6
3
0
0 10 20 30 40 50 60 70 80 mA 100
I_C
Transition frequency f_T= ƒ(I_C)
ƒ = 1 GHz
V_CE = parameter in V
65
GHz
55
1.3 to 2.3
50
45
1
40
35
30
25
0.8
0.5
20
15
0.3
10
5
0
0 10 20 30 40 50 60 70 80 mA 100
I_C
BFP620
Third order Intercept Point IP₃ = ƒ(I_C)
(Output, Z_S = Z_L = 50 Ω )
V_CE = parameter, f = parameter
Power gain G_ma, G_ms = ƒ(f)
|S₂₁|² = ƒ (f)
V_CE = 1.5 V, I_C = 50 mA
55
dB
45
40
35
30
Gms
25
20
|S21|²
15
10
5
0
1
2
Gma
3
4 GHz
6
f
5
2010-09-21