BFP620_10 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP620
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 95 °C
Junction temperature
T_J
Ambient temperature
T_A
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to pcb}
Thermal Resistance
Parameter
Symbol
Junction - soldering point¹⁾
R_thJS
Value
Unit
V
2.3
2.1
7.5
7.5
1.2
80
mA
3
185
mW
150
°C
-65 ... 150
-65 ... 150
Value
Unit
≤ 300
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 7.5 V, V_BE = 0
V_CE = 5 V, V_BE = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 0.5 V, I_C = 0
DC current gain
I_C = 50 mA, V_CE = 1.5 V, pulse measured
V_(BR)CEO ^{2.3 2.8}
-V
I_CES
I_CBO
µA
-
-
10
- 0.001 0.04
-
1
40 nA
I_EBO
-
10 900
h_FE
110 180 270 -
1_{For calculation of RthJA please refer to Application Note AN077 Thermal Resistance}
2
2010-09-21