BFG235 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 235
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
14
I_C=200mA
dB
0.9GHz
10
8
1.8GHz
0.9GHz
6
4
2
00
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
42
dBm
10V
8V
36
34
5V
32
30
3V
28
26
2V
24
22
20
18
16
1V
14
120
50
100 150 200 mA
300
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=200mA
dB
20
V_CE = Parameter
30
I_C=200mA
dB
20
15
15
10
10
10V
5
2V
1V
0.7V
0
5
-5
10V
2V
1V
0.7V
00.0 _{0.5 1.0 1.5 2.0 2.5 GHz 3.5}
f
6
-100.0 _{0.5 1.0 1.5 2.0 2.5 GHz 3.5}
f
Oct-27-1999