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| BFG235 Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) | |||
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BFG 235
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 200 mA, VCE = 8 V
V(BR)CEO 15
-
-
ICES
-
-
200
ICBO
-
-
100
IEBO
-
-
2
hFE
50 120 250
Unit
V
µA
nA
µA
-
2
Oct-27-1999
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