BFG235 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPN Silicon RF Transistor

For low-distortion broadband output amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
120 mA to 250 mA

Power amplifiers for DECT and PCN systems

Integrated emitter ballast resistor

f_T = 5.5 GHz
BFG 235
4
3
2
1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 235
Marking
BFG235
Pin Configuration
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S
80 °C ^F)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Value
Unit
15
V
25
25
2
300
mA
40
2
W
150
°C
-65 ... 150
-65 ... 150

35
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
1
Oct-27-1999