BFG235 Datasheet, PDF (3/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 235
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 200 mA, V_CE = 8 V, f = 200 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
C_ce
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Noise figure
F
I_C = 60 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
Power gain, maximum available ^F)
I_C = 200 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
G_ma
4
5.5
- GHz
-
2.6 3.6 pF
-
1.5
-
-
15
-
-
2.7
- dB
-
12
-
Transducer gain

I_C = 200 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
|S_21e|²
-
6
-
Third order intercept point
IP₃

I_C = 200 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
-
40
- dBm
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Oct-27-1999