BFG19S Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

BFG 19S
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
14
I_C=70mA
dB
10
0.9GHz
0.9GHz
1.8GHz
8
6
1.8GHz
4
2
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
40
dBm
30
25
20
15
8V
5V
3V
2V
1V
00
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
100
20
40
60
Power Gain |S₂₁|²= f(f)
80 mA
120
I_C
V_CE = Parameter
36
I_C=70mA
dB
28
24
20
16
12
8
10V
4
2V
1V
00.0
0.5
1.0
1.5
2.0
0.7V
2.5 GHz 3.5
f
V_CE = Parameter
32
dB ^IC=70mA
24
20
16
12
8
4
10V
0
2V
1V
-4
0.7V
-80.0 _{0.5 1.0 1.5 2.0 2.5 GHz 3.5}
f
6
Oct-26-1999