BFG19S Datasheet, PDF (3/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

BFG 19S
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 70 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
f_T
4
5.5
C_cb
- 0.85
C_ce
-
0.4
C_eb
-
4.6
Noise figure
F
I_C = 20 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
-
2.5
f = 1.8 GHz
-
4
max.
-
1.4
-
-
-
-
Unit
GHz
pF
dB
Power gain, maximum available ^F)
I_C = 70 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
f = 1.8 GHz
G_ma
- 13.5 -
-
8
-
Transducer gain

I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
-
11
-
-
5
-
Third order intercept point

I_C = 70 mA, V_CE = 8 V, Z_S = Z_L= 50 ,
f = 900 MHz
IP₃
-
35
- dBm
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Oct-26-1999