BFG19S Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

BFG 19S
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
2.6
pF
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.00
4
8
12
16 V
22
V_CB
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
14
10V
5V
dB
3V
2V
10
Transition frequency f_T = f (I_C)
V_CE = Parameter
6.0
GHz
5V
3V
5.0
2V
4.5
4.0
3.5
3.0
2.5
1V
2.0
1.5
0.7V
1.00
20
40
60
80 mA
120
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
10
dB
10V
5V
3V
6
2V
8
4
1V
1V
6
2
4
0.7V
20
20
40
60
80 mA
120
I_C
5
0
0.7V
-20
20
40
60
80 mA
120
I_C
Oct-26-1999