BFG19S Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

NPN Silicon RF Transistor

For low noise, low distortion broadband
amplifiers in antenna and
telecommunication systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
BFG 19S
4
3
2
1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 19S
Marking
BFG19S
Pin Configuration
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S
75 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Value
Unit
15
V
20
20
3
100
mA
12
1
W
150
°C
-65 ... 150
-65 ... 150

75
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
1
Oct-26-1999