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| BC856W Datasheet, PDF (6/8 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC856W...BC860W
Collector cutoff current ICBO = f (TA)
VCB = 30V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
10 4
nA
Î CB0
10 3
5
10 2
5
10 1
5
max
EHP00381
typ
10 0
5
10 -1
0
50
100
DC current gain hFE = f (IC)
VCE = 5V
C 150
TA
10 2
mA
ÎC
10 1
5
EHP00380
100 C
25 C
-50 C
10 0
5
10 -1
0
0.1 0.2 0.3 0.4 V 0.5
VCEsat
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
10 3
h FE 5 100 C
25 C
102 -50C
5
EHP00382
10 2
mA
ÎC
10 1
5
100 C
25 C
-50 C
EHP00379
10 1
10 0
5
5
10 0
10 -2
5 10 -1 5 10 0
5 101 mA 10 2
ÎC
10 -1
0
6
0.2 0.4 0.6 0.8
V 1.2
V BEsat
Dec-11-2001
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