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| BC856W Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC856W...BC860W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CES
IC = 10 µA, VBE = 0
BC856W
80
-
BC857/860W
50
-
BC858/859W
30
-
V
-
-
-
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
V(BR)EBO 5
ICBO
-
ICBO
-
hFE
hFE-group A
-
hFE-group B
-
hFE-group C
-
-
-
-
15 nA
-
5 µA
-
140 -
250 -
480 -
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE
hFE-group A
hFE-group B
hFE-group C
125 180 250
220 290 475
420 520 800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
mV
-
75 300
-
250 650
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
700
-
-
850
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
600 650 750
-
-
820
1) Pulse test: t â¤=300µs, D = 2%
3
Dec-11-2001
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