BC856W Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP general purpose transistors

BC856W...BC860W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Peak emitter current
Total power dissipation, T_S = 124 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point¹⁾
Symbol
V_CEO
V_CBO
V_CES
V_EBO
I_C
I_CM
I_BM
I_EM
P_tot
T_j
T_stg
BC856W BC857W BC858W Unit
BC860W BC859W
65
45
30 V
80
50
30
80
50
30
5
5
5
100
mA
200
mA
200
200
250
mW
150
°C
-65 ... 150
R_thJS

105
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
I_C = 10 mA, I_B = 0
BC856W
65
-
BC857/860W
45
-
V
-
-
BC858/859W
30
-
-
Collector-base breakdown voltage
V_(BR)CBO
I_C = 10 µA, I_E = 0
BC856W
80
-
-
BC857/860W
50
-
-
BC858/859W
30
-
-
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
2
Dec-11-2001