BC856W Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose transistors

BC856W...BC860W
Electrical Characteristics at T_A = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics
Transition frequency
f_T
I_C = 20 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Short-circuit input impedance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
h_11e
h_FE-gr.A
h_FE-gr.B
h_FE-gr.C
Open-circuit reverse voltage transf.ratio
h_12e
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
h_FE-gr.A
h_FE-gr.B
h_FE-gr.C
Short-circuit forward current transf.ratio
h_21e
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
h_FE-gr.A
h_FE-gr.B
h_FE-gr.C
Open-circuit output admittance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
h_22e
h_FE-gr.A
h_FE-gr.B
h_FE-gr.C
Noise figure

I_C = 200 µA, V_CE = 5 V, R_S = 2 k ,
f = 1 kHz,  f = 200 Hz
F
BC856W
BC857W
BC858W
Noise figure

I_C = 200 µA, V_CE = 5 V, R_S = 2 k ,
f = 1 kHz,  f = 200 Hz
F
BC859W
BC860W
Equivalent noise voltage

I_C = 200 µA, V_CE = 5 V, R_S = 2 k ,
f = 10 ... 50 Hz
V_n
BC860W
-
250
- MHz
-
3
5 pF
-
10
15
k

-
2.7
-
-
4.5
-
-
8.7
-
10^-4
-
1.5
-
-
2
-
-
3
-
-
-
200
-
-
330
-
-
600
-
S
-
18
-
-
30
-
-
60
-
-
-
10 dB
-
1
4
-
1
4
-
- 0.11 µV
4
Dec-11-2001