SPP80N06S2-09 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

5 Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: t_p = 80 µs
190
SPP80N06S2-09
Ptot = 190W
A
l
160
140
120
100
80
60
40
20
0
0
1
2
3
V_GS [V]
a
4.5
kb
4.8
c
5.0
j_d
5.3
e
5.5
if
5.8
g
6.0
h
h
6.3
i
6.5
g_j
6.8
f^k
7.0
l
10.0
e
d
c
b
a
4 V 5.5
V_DS
7 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 80 µs
160
A
120
SPP80N06S2-09
SPB80N06S2-09
6 Typ. drain-source on resistance
R_DS(on) = f (I_D)
parameter: V_GS
SPP80N06S2-09
30
Ω
de
fg
hi
jk
24
22
20
18
16
14
12
10
l
8
6
4 V_GS [V] =
de f
2 5.3 5.5 5.8
gh i j k l
6.0 6.3 6.5 6.8 7.0 10.0
0
0 20 40 60 80 100 120 140 A 170
I_D
8 Typ. forward transconductance
g_fs = f(I_D); T_j=25°C
parameter: g_fs
75
S
100
45
80
30
60
40
15
20
0
0
1
2
3
4
5V
7
V_GS
Page 5
0
0 10 20 30 40 50 60 70 A 90
I_D
2003-05-09